vishay cny117f document number 83598 rev. 1, 29-aug-03 vishay semiconductors www.vishay.com 1 1 2 3 6 5 4 nc c e a c nc 18216 no base connection phototransistor optocoupler features ? breakdown voltage, 5300 v rms no base terminal connection for improved com- mon mode interface immunity long term stability industry standard dual-in-line package ambient temperature range, 110 c agency approvals ul - file no. e52744 system code h or j din en 60747-5-5 (vde 0884):2003-01 available with option 1 description the cny117f is an optocoupler consisting of a gal- lium arsenide infrared emitting diode optically cou- pled to a silicon planar phototransistor detector in a plastic plug-in dip-6 package. the coupling device is suitable for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. in contrast to the cny117 series, the base terminal of the f type is not connected, resulting in a substan- tially improved common-mode interference immunity. order information for additional order information see option section absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks cny117f-1 ctr 40 - 80 %, dip cny117f-2 ctr 63 - 125 %, dip cny117f-3 ctr 100 - 200 %, dip cny117f-4 ctr 160 - 320 %, dip parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 s i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c
www.vishay.com 2 document number 83598 rev. 1, 29-aug-03 vishay cny117f vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw derate linearly from 25 c 1.5 mw/c parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to standard climate 23/50 din 50014) v io 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 110 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 a v br 6.0 v reserve current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf c bc 6.5 pf c eb 7.5 pf
vishay cny117f document number 83598 rev. 1, 29-aug-03 vishay semiconductors www.vishay.com 3 coupler current transfer ratio current transfer ratio i c /i f at v ce = 5.0 v, 25 c and collector-emitter leakage current by dash number switching characteristics linear operation (without saturation) switching operation (with saturation) parameter test condition part symbol min ty p. max unit saturation voltage, collector- emitter i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector-emitter leakage current v ce = 10 v cny117f-1 i ceo 2.0 50 na cny117f-2 i ceo 2.0 50 na cny117f-3 i ceo 5.0 100 na cny117f-4 i ceo 5.0 100 na parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma cny117f-1 ctr 40 80 % cny117f-2 ctr 63 125 % cny117f-3 ctr 100 200 % cny117f-4 ctr 160 320 % i f = 1.0 ma cny117f-1 ctr 13 30 % cny117f-2 ctr 22 45 % cny117f-3 ctr 34 70 % cny117f-4 ctr 56 90 % parameter test condition symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 w t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 w t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 w t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 w t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, r l = 75 w f co 250 khz parameter test condition part symbol min ty p. max unit turn-on time i f = 20 ma cny117f-1 t on 3.0 s i f = 10 ma cny117f-2 t on 4.2 s cny117f-3 t on 4.2 s i f = 5.0 ma cny117f-4 t on 6.0 s rise time i f = 20 ma cny117f-1 t r 2.0 s i f = 10 ma cny117f-2 t r 3.0 s cny117f-3 t r 3.0 s i f = 5.0 ma cny117f-4 t r 4.6 s
www.vishay.com 4 document number 83598 rev. 1, 29-aug-03 vishay cny117f vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) turn-off time i f = 20 ma cny117f-1 t off 18 s i f = 10 ma cny117f-2 t off 23 s cny117f-3 t off 23 s i f = 5.0 ma cny117f-4 t off 25 s fall time i f = 20 ma cny117f-1 t f 11 s i f = 10 ma cny117f-2 t f 14 s cny117f-3 t f 14 s i f = 5.0 ma cny117f-4 t f 15 s parameter test condition part symbol min ty p. max unit figure 1. linear operation ( without saturation) figure 2. switching operation (with saturation) icny17f_01 r l =75 ? v cc =5 v i c 45 ? i f i f 1k ? v cc =5 v 47 ? icny17f_02 figure 3. current transfer ratio vs. diode current figure 4. current transfer ratio vs. diode current 1 2 3 4 icny17f_03 (t a = ?25c, v ce = 5.0 v) i c /i f =f(i f ) icny17f_04 1 2 3 4 (t a =0c,v ce = 5.0 v) i c /i f =f(i f )
vishay cny117f document number 83598 rev. 1, 29-aug-03 vishay semiconductors www.vishay.com 5 figure 5. current transfer ratio vs. diode current figure 6. current transfer ratio vs. diode current figure 7. current transfer ratio vs. diode current 1 2 3 4 icny17f_05 (t a = 25c, v ce = 5.0 v) i c /i f =f(i f ) 1 2 3 4 icny17f_06 (t a = 50c, v ce = 5.0 v) 1 2 3 4 icny17f_07 (t a = 75c, v ce = 5.0 v) figure 8. current transfer ratio vs. diode current figure 9. current transfer ratio (ctr) vs. temperature figure 10. output characteristics cny17f-2, -3 0 20 40 60 80 100 120 140 160 180 200 012345678910 i f ( ma ) 17551 i c/ i f t a = 110 q c v ce = 5 v ?4 ?3 ?2 ?1 0 50 100 150 200 250 300 ?60 ?40 ?20 0 20 40 60 80 100 temperature ( q c ) 17552 i c/ i f i f = 10 ma v ce = 5 v ?4 ?3 ?2 ?1 icny17f_09 (t a = 25c) i c =f(v ce )
www.vishay.com 6 document number 83598 rev. 1, 29-aug-03 vishay cny117f vishay semiconductors figure 11. forward voltage vs. forward current figure 12. collector emitter dark current vs. ambient temperature figure 13. saturation voltage vs. collector current and modulation depth cny17f-1 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 0 2 4 6 8 101214161820 i f ( ma ) 17553 v f ( v ) t a = 110 q c v ce = 5 v 25 q c 50 q c 75 q c 110 q c 0 20406080100120 ambient temperature ( c ) 17554 ce0 100 10 0.1 0.001 0.01 1 v ce = 35 v v ce = 12 v icny17f_12 v cesat =f(i c )(t a = 25c) figure 14. saturation voltage vs. collector current and modulation depth cny17f-2 figure 15. saturation voltage vs. collector current and modulation depth cny17f-3 figure 16. saturation voltage vs. collector current and modulation depth cny17f-4 icny17f_13 v cesat =f(i c )(t a = 25c) icny17f_14 v cesat =f(i c )(t a = 25c) icny17f_15 v cesat =f(i c )(t a = 25c)
vishay cny117f document number 83598 rev. 1, 29-aug-03 vishay semiconductors www.vishay.com 7 figure 17. permissible pulse load figure 18. permissible total power dissipation vs. ambient temperature figure 19. transistor capacitance icny17f_16 d=parameter, t a = 25c, i f =f(t p ) 0 25 50 75 100 125 150 175 0 25 50 75 100 125 t amb ? ambient temperature ( q c ) 17555 p ?power dissipation (mw) tot phototransistor diode icny17f_19 c=f (v o )(t a = 25c, f=1.0 mhz)
www.vishay.com 8 document number 83598 rev. 1, 29-aug-03 vishay cny117f vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3?9 .300?.347 (7.62?8.81) 4 typ. iso method a
vishay cny117f document number 83598 rev. 1, 29-aug-03 vishay semiconductors www.vishay.com 9 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
